1N459TR【PDF 1/2 页】DIODE HI CONDUCTANCE 200V DO-35

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?2004 Fairchild Semiconductor Corporation

www.fairchildsemi.com

December 2004

1N459/A Rev. A

1N459/A Small Signal Diode

1N459/A

Small Signal Diode

Absolute Maximum Ratings *

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Electrical Characteristics

= 25°C unless otherwise noted

Symbol Parameter Value Unit

VRRM

Maximum Repetitive Reverse Voltage 200 V

IF(AV)

Average Rectified Forward Current 500 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

TSTG

Storage Temperature Range -65 to +200

°C

Operating Junction Temperature 175

°C

Symbol Parameter Value Unit

Power Dissipation 500 mW

RθJA

Thermal Resistance, Junction to Ambient 300

°C/W

Symbol Parameter Conditions Min. Max Units

Breakdown Voltage IR

= 100

μA 200 V

Forward Voltage

1N459A

= 3mA

= 100mA

1.0

Reverse Leakage 1N459

1N459A

= 175V, T

= 150

°C

μA

= 175V

Total Capacitance 1N459A VR

= 0, f = 1.0MHz 6.0 pF

DO-35

Color Band Denotes Cathode

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